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12N06ZL-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 12N06ZL-TN3-R
功能描述  12A, 60V N-CHANNEL POWER MOSFET
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

12N06ZL-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  12N06ZL-TN3-R Datasheet HTML 1Page - Unisonic Technologies 12N06ZL-TN3-R Datasheet HTML 2Page - Unisonic Technologies 12N06ZL-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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12N06Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-767.A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
TC = 25°C
ID
12
A
Pulsed
IDM
48
A
Total Dissipation at TC = 25°C
PTOT
30
W
Peak Diode Recovery dv/dt
dv/dt
15
V/ns
Avalanche Energy
EAS
140
mJ
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient Max
θJA
100
°C/W
Junction to Case Max
θJC
5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250μA
60
V
Drain-Source Leakage Current
IDSS
VDS=60V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=±20V
±
10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VDS=10V, ID=6A
0.08
0.1
Ω
On State Drain Current
ID(ON)
VGS=10V, VDS=1V
5
30
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, f=1MHz, VGS=0V
350
pF
Output Capacitance
COSS
75
pF
Reverse Transfer Capacitance
CRSS
30
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=5V, ID=12A, VDD=48V
7.5
10
nC
Gate to Source Charge
QGS
2.5
nC
Gate to Drain Charge
QGD
3.0
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=6A, RG=4.7Ω,
VGS=0~10V
10
ns
Rise Time
tR
35
ns
Turn-OFF Delay Time
tD(OFF)
20
ns
Fall-Time
tF
13
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
12
A
Maximum Body-Diode Pulsed Current
ISM
48
A
Drain-Source Diode Forward Voltage
VSD
IS=12A
1.5
V



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