12N30

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-787.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

300

V

Gate-Source Voltage

±20

V

Drain Current

12

A

Pulsed (Note 2)

48

A

Single Pulsed Avalanche Energy

474

mJ

Power Dissipation

83

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

1.5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

300

V

Drain-Source Leakage Current

1

µA

Gate- Source Leakage Current

Forward

+100 nA

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.34 0.47

Ω

DYNAMIC PARAMETERS

Input Capacitance

3000 pF

Output Capacitance

900

pF

Reverse Transfer Capacitance

400

pF

SWITCHING PARAMETERS

Total Gate Charge

(Note 1, 2)

24

nC

Gate-Source Charge

5

nC

Gate-Drain Charge

5.6

nC

Turn-ON Delay Time

(Note 1, 2)

30

50

ns

Rise Time

105 150

ns

Turn-OFF Delay Time

480 750

ns

Fall-Time

140 200

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.4

V

Maximum Body-Diode Continuous Current

12

A

Maximum Body-Diode Pulsed Current

48

A

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature