100N02

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-860.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

15

V

Gate-Source Voltage

±8

V

Drain Current

Continuous

100

A

Pulsed

400

A

Avalanche Energy

Single Pulsed

12

mJ

Power Dissipation

54

W

Junction Temperature

+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

2.3

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

15

V

Drain-Source Leakage Current

1

μA

Gate-Source Leakage Current

Forward

±100 nA

Reverse

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

0.5

1.2

V

Static Drain-Source On-State Resistance

12

mΩ

DYNAMIC PARAMETERS

Input Capacitance

3565

pF

Output Capacitance

1310

pF

Reverse Transfer Capacitance

395

pF

SWITCHING PARAMETERS

Total Gate Charge

46

60

nC

Gate to Source Charge

6.9

nC

Gate to Drain Charge

9.8

nC

Turn-ON Delay Time

9

ns

Rise Time

106

ns

Turn-OFF Delay Time

53

ns

Fall-Time

41

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.3

V