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UK2158G-AE2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UK2158G-AE2-R
功能描述  짹0.1A, 50V N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UK2158G-AE2-R 数据表(HTML) 2 Page - Unisonic Technologies

  UK2158G-AE2-R Datasheet HTML 1Page - Unisonic Technologies UK2158G-AE2-R Datasheet HTML 2Page - Unisonic Technologies UK2158G-AE2-R Datasheet HTML 3Page - Unisonic Technologies  
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UK2158
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS
50
V
Gate-Source Voltage (VGS=0)
VGSS
±7.0
V
Drain Current
DC
ID(DC)
±0.1
A
Pulse (PW≤10ms,
Duty Cycle≤50%)
ID(PULSE)
±0.2
A
Power Dissipation
PD
200
mW
Channel Temperature
TCH
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Leakage Current
IDSS
VDS=50V, VGS=0V
1.0
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+7.0V, VDS=0V
+3.0
µA
Reverse
VGS=-7.0V, VDS=0V
-3.0
µA
ON CHARACTERISTICS
Gate Cut-off Voltage
VGS(OFF)
VDS=3V, ID=1.0µA
0.5
0.7
1.1
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=1.5V, ID=1.0mA
32
50
Ω
VGS=2.5V, ID=10mA
16
20
Ω
VGS=4.0V, ID=10mA
12
15
Ω
Forward Transfer Admittance
| yFS|
VDS=3V, ID=10mA
20
mS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=3V, f=1.0MHz
6
pF
Output Capacitance
COSS
8
pF
Reverse Transfer Capacitance
CRSS
1
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=3V, VGS(ON)=3V, ID=20mA,
RG=10Ω, RL=150Ω
9
ns
Rise Time
tR
48
ns
Turn-OFF Delay Time
tD(OFF)
21
ns
Fall-Time
tF
31
ns



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