UM6K1N

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-897.b



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

100

mA

Pulsed (Note 1)

200

mA

Power Dissipation (Note 2)

150

mW

Channel Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pw≤10µs, Duty cycle≤50%.

3. With each pin mounted on the recommended lands.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

Forward

+1

µA

Reverse

-1

µA

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

1.5

V

Static Drain-Source On-State Resistance

5

8

Ω

7

13

Ω

Forward Transfer Admittance

20

mS

DYNAMIC PARAMETERS

Input Capacitance

13

pF

Output Capacitance

9

pF

Reverse Transfer Capacitance

4

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

15

ns

Rise Time

35

ns

Turn-OFF Delay Time

80

ns

Fall-Time

80

ns