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UOT406G-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UOT406G-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UOT406 Preliminary TRIACS UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-036.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltage VDRM 600 V Repetitive Peak Reverse Voltage VRRM 600 V RMS On-State Current full sine wave, Tsp≤103°C IT(RMS) 1 A Non-Repetitive Peak On-State Current full sine wave, TJ≤25°C prior to surge t=20ms ITSM 12.5 A t=16.7ms 13.8 A I 2t for Fusing tp=10ms I 2t 1.28 A 2s Rate of Rise of On-State Current ITM=1A, IG=20mA, dIG/dt=0.2A/µs T2+G+ dIT/dt 50 A/µs T2+G- 50 A/µs T2-G- 50 A/µs T2-G+ 10 A/µs Peak Gate Current IGM 1 A Peak Gate Power PGM 2 W Average Gate Power Over any 20ms period PG(AV) 0.1 W Storage Temperature TSTG -40 ~ +150 °C Junction Temperature TJ 125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Case θJC 15 K/W Junction to Ambient For minimum footprint θJA 156 K/W For pad area 70 K/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Gate Trigger Current IGT VD=12V, IT=0.1A T2+G+ 3 mA T2+G- 3 mA T2-G- 3 mA T2-G+ 5 mA Gate Trigger Voltage VGT VD=12V, IT=0.1A 1.3 V VD=VDRM, IT=0.1A, TJ=125°C 0.2 V Holding Current IH VD=12V, IG=0.1A 7 mA Latching Current IL VD=12V, IG=0.1A T2+G+ 7 mA T2+G- 20 mA T2-G- 7 mA T2-G+ 7 mA On-State Voltage VT IT=1A 1.3 1.6 V Off-State Current ID VD=VDRM(max), TJ=125°C 0.5 mA Rate of Rise of Off-State Voltage dVD/dt VDM=0.67VDRM(max), TJ=110°C, exponential waveform, gate open circuit 10 V/µs Rate of Change of Commutating Voltage dVcom/dt VDM=400V, TJ=110°C, ITM=1A, dIcom/dt= 0.44A/ms 0.5 V/µs |
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