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UT90N03L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UT90N03L-TN3-R
功能描述  90A, 30V N-CHANNEL(D-S) POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT90N03L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies

  UT90N03L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UT90N03L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UT90N03L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UT90N03L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UT90N03L-TN3-R Datasheet HTML 5Page - Unisonic Technologies UT90N03L-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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UT90N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-847.C
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
VDS=30V, VGS=0V,
TJ=55°C
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.5
2.5
V
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=10V, ID=28.8A
2.4
2.9
mΩ
VGS=4.5V, ID=27A
2.7
3.3
mΩ
Forward Transconductance (Note 1)
gFS
VDS=15V, ID=28.8A
160
S
On State Drain Current (Note 1)
ID(ON)
VGS=10V, VDS≥5V
90
A
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VGS=0V, VDS=15V,
f=1.0MHz
12065
pF
Output Capacitance
COSS
1725
pF
Reverse Transfer Capacitance
CRSS
970
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=15V, VGS=10V,
ID=28.8A
171
257
nC
Total Gate Charge
QG
VDS=15V, VGS=4.5V,
ID=28.8A
81.5
123
nC
Gate to Source Charge
QGS
34
nC
Gate to Drain Charge
QGD
29
nC
Gate Resistance
RG
f=1MHz
1.4
2.1
Ω
Turn-ON Delay Time
tD(ON)
VDD=15V, RL=0.625Ω,
ID=24A, VGEN=10V, RG=1Ω
18
27
ns
Rise Time
tR
11
17
ns
Turn-OFF Delay Time
tD(OFF)
70
105
ns
Fall-Time
tF
10
15
ns
Turn-ON Delay Time
tD(ON)
VDD=15V, RL=0.67Ω,
ID=22.5A, VGEN=4.5V,
RG=1Ω
55
83
ns
Rise Time
tR
180
270
ns
Turn-OFF Delay Time
tD(OFF)
55
83
ns
Fall-Time
tF
12
18
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TC=25°C
90
A
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
90
A
Drain-Source Diode Forward Voltage
VSD
IS=22A
0.8
1.2
V
Body Diode Reverse Recovery Time
tRR
IF=20A, di/dt=100A/µs,
TJ=25°C
52
78
ns
Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.



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