UT2035Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-937.a



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Drain Current

Continuous (Note 1)

-3.6

A

-2.9

A

Pulsed (Note 2)

-24

A

Power Dissipation (Note 1)

0.81

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Notes:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t≤10s.

2. Repetitive rating, pulse width limited by junction temperature.



PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

153.5

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS (Note 1)

Drain-Source Breakdown Voltage

-20

V

Drain-Source Leakage Current

-1.0

µA

Gate-Source

Leakage Current

Forward

+10

µA

Reverse

-10

µA

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

-0.4 -0.7 -1.0

V

Static Drain-Source On-State Resistance

30

42

mΩ

50

65

mΩ

61

82

mΩ

Forward Transfer Admittance

14

S

Diode Forward Voltage

-0.7 -1.0

V

DYNAMIC PARAMETERS

Input Capacitance

1610

pF

Output Capacitance

157

pF

Reverse Transfer Capacitance

145

pF

SWITCHING PARAMETERS

Total Gate Charge

15.4

nC

Gate to Source Charge

2.5

nC

Gate to Drain Charge

3.3

nC

Gate Resistance

9.45

Ω

Turn-ON Delay Time

16.8

ns

Rise Time

12.4

ns

Turn-OFF Delay Time

94.1

ns

Fall-Time

42.4

ns

Note: 1. Short duration pulse test used to minimize self-heating effect.