UT4450L-S08-R datasheet(4/9 Pages) UTC

4 / 9 page

UT4450

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R502-898, C



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

Drain-Source Leakage Current

IDSS

VDS=40V, VGS=0V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100 nA

Reverse

VGS=-20V, VDS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.7

2.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=7A

mΩ

VGS=4.5V, ID=5A

mΩ

Forward Transconductance

gFS

VDS=5V, ID=7A

On State Drain Current

ID(ON)

VGS=10V, VDS=5V

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=20V, f=1.0MHz

516

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

4.6

Ω

SWITCHING PARAMETERS (Note 2)

Total Gate Charge

VGS=4.5V, VDS=20V, ID=7A

4.3

Total Gate Charge

VGS=10V, VDS=20V, ID=7A

8.9

Gate to Source Charge

QGS

2.4

Gate to Drain Charge

QGD

1.4

Turn-ON Delay Time

tD(ON)

VDS=20V, VGS=10V, RGEN=3Ω,

RL=2.8Ω

6.4

Rise Time

3.6

Turn-OFF Delay Time

tD(OFF)

16.2

Fall-Time

6.6

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

3.5

Drain-Source Diode Forward Voltage

VSD

IS=1A, VGS=0V

0.76

Body Diode Reverse Recovery Time

tRR

IF=7A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge

QRR

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