UTT6N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-779.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

6

A

Pulsed

24

A

Single Pulsed Avalanche Energy (Note 3)

12

mJ

Power Dissipation

2.2

W

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

55

°C/W

Junction to Case

12

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

100

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

1.0

3.0

V

Static Drain-Source On-State Resistance

200

m

Ω

225

m

Ω

DYNAMIC PARAMETERS

Input Capacitance

234

315

pF

Output Capacitance

46

65

pF

Reverse Transfer Capacitance

3.1

5

pF

SWITCHING PARAMETERS

Total Gate Charge

4.3

7

nC

Gate to Source Charge

0.7

nC

Gate to Drain Charge

0.9

nC

Turn-ON Delay Time

Ω

3.8

10

ns

Rise Time

1.3

10

ns

Turn-OFF Delay Time

10

20

ns

Fall-Time

1.5

10

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

ssDrain-Source Diode Forward Voltage

0.86

1.3

V

Maximum Body-Diode Continuous Current

6

A

Source Current Pulsed

24

A

Notes: 1.

reference is defined as the solder mounting surface of the drain pins.

2. Pulse Test: Pulse width

≤ 300µs, Duty cycle ≤ 2%