UTT10NP06G-S08-R datasheet(4/7 Pages) UTC

4 / 7 page

UTT10NP06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-773.D



ELECTRICAL CHARACTERISTICS(Cont.)

P-Channel

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-60

Drain-Source Leakage Current

IDSS

VDS=-60V, VGS=0V, TJ=25°C

-1

µA

VDS=-48V, VGS=0V, TJ=125°C

-10

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V

+100 nA

Reverse

VGS=-20V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-3

Static Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=-10V, ID=-3A

mΩ

VGS=-4.5V, ID=-2A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1900 2300 pF

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge (Note 2)

VGS=-4.5V, VDS=-48V, ID=-3A

200 230

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time (Note 2)

tD(ON)

VDS=-30V, ID=-1A, RG=3.3Ω

VGS=-10V, RD=30Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

280

Fall-Time

150

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note 2)

VSD

IS=-1.7A, VGS=0V

-1.2

Notes: 1. Pulse width limited by maximum junction temperature

2. Pulse width ≤ 300µs, Duty cycle ≤ 2%

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