UTT10NP06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-773.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

N-CHANNEL

P-CHANNEL

Drain-Source Voltage

60

-60

V

Gate-Source Voltage

±20

±20

V

Drain Current

4.5

-3

A

Pulsed (Note 1)

20

-20

A

Power Dissipation

2.0

W

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note

:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W



N-Channel

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

µA

10

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-State Resistance

(Note 2)

36

56

mΩ

44

64

mΩ

DYNAMIC PARAMETERS

Input Capacitance

1100 1500

pF

Output Capacitance

80

pF

Reverse Transfer Capacitance

60

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 2)

120

150

nC

Gate to Source Charge

12

nC

Gate to Drain Charge

60

nC

Turn-ON Delay Time (Note 2)

33

ns

Rise Time

26

ns

Turn-OFF Delay Time

140

ns

Fall-Time

64

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note 2)

1.2

V