UTT20N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-708.C



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

20

A

Pulsed

80

A

Single Pulsed Avalanche Energy

170

mJ

Power Dissipation

TO-220/TO-263

89

W

TO-252

50

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-263

62

°C/W

TO-252

110

Junction to Case

TO-220/TO-263

1.4

°C/W

TO-252

2.5



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

1

µA

10

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

37.5

46

mΩ

DYNAMIC PARAMETERS

Input Capacitance

725 1015

pF

Output Capacitance

213

300

pF

Reverse Transfer Capacitance

58

120

pF

SWITCHING PARAMETERS

Total Gate Charge

21.2

30

nC

Gate to Source Charge

5.6

nC

Gate to Drain Charge

7.3

nC

Turn-ON Delay Time

9.5

ns

Rise Time

60.5 120

ns

Turn-OFF Delay Time

27.1

ns

Fall-Time

37.1

80

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

20

A

Maximum Body-Diode Pulsed Current

80

A

Drain-Source Diode Forward Voltage

1.2

V