UTT75N08

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-769.d



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

80

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

75

A

Pulsed (Note 1)

300

A

Single Pulsed Avalanche Energy (Note 2)

185

mJ

Power Dissipation

TO-220

125

W

TO-220F1

40

W

TO-252

50

W

Junction Temperature

150

°C

Storage Temperature Range

-55~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F1

62.5

°C/W

TO-252

110

°C/W

Junction to Case

TO-220

1

°C/W

TO-220F1

3.2

TO-252

2.5



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

80

V

Drain-Source Leakage Current

1

µA

Gate-Source Leakage Current

Forward

+100 nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.4

3

V

Static Drain-Source On-State Resistance

21

mΩ

DYNAMIC PARAMETERS

Input Capacitance

4152 5522

pF

Output Capacitance

485

728

pF

Reverse Transfer Capacitance

89

118

pF

SWITCHING PARAMETERS

Total Gate Charge

49

69

nC

Gate to Source Charge

23

nC

Gate to Drain Charge

16

nC

Turn-ON Delay Time

43

95

ns

Rise Time

212

434

ns

Turn-OFF Delay Time

272

556

ns

Fall-Time

147

303

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

1.25

V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%