数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UTT80N06L-TQ2-R 数据表(PDF) 4 Page - Unisonic Technologies

部件名 UTT80N06L-TQ2-R
功能描述  60V, 80A N-CHANNEL POWER MOSFET
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT80N06L-TQ2-R 数据表(HTML) 4 Page - Unisonic Technologies

  UTT80N06L-TQ2-R Datasheet HTML 1Page - Unisonic Technologies UTT80N06L-TQ2-R Datasheet HTML 2Page - Unisonic Technologies UTT80N06L-TQ2-R Datasheet HTML 3Page - Unisonic Technologies UTT80N06L-TQ2-R Datasheet HTML 4Page - Unisonic Technologies UTT80N06L-TQ2-R Datasheet HTML 5Page - Unisonic Technologies UTT80N06L-TQ2-R Datasheet HTML 6Page - Unisonic Technologies UTT80N06L-TQ2-R Datasheet HTML 7Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 4 / 7 page
background image
UTT80N06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 7
www.unisonic.com.tw
QW-R502-706.c
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V, TJ=25°C
60
V
Breakdown Voltage Temperature Coefficient △BVDSS △
/TJ Reference to 25°C, ID=250µA
0.075
V/°C
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
1
µA
VDS=48V, TC=150°C
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
8.5
10
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
2450 3190 pF
Output Capacitance
COSS
910 1190 pF
Reverse Transfer Capacitance
CRSS
145
190
pF
SWITCHING PARAMETERS
Total Gate Charge at 10V
QG(TOT)
VGS=10V, VDS=48V, ID=80A
(Note 1, 2)
57
74
nC
Gate to Source Charge
QGS
15
nC
Gate to Drain Charge
QGD
24
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=80A, RG=25Ω
(Note 1, 2)
32
75
ns
Rise Time
tR
259
528
ns
Turn-OFF Delay Time
tD(OFF)
136
282
ns
Fall-Time
tF
113
236
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
80
A
Maximum Body-Diode Pulsed Current
ISM
320
A
Drain-Source Diode Forward Voltage
VSD
IS=80A, VGS=0V
1.4
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature typical characteristics



Html Pages

1 2 3 4 5 6 7


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com