BSS139Z

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-862.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

50

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

200

mA

Pulsed

800

mA

Power Dissipation

225

mW

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

556

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

50

V

Drain-Source Leakage Current

0.1

µA

0.5

µA

Gate-Source Leakage Current

Forward

+10

µA

Reverse

-10

µA

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

0.5

1.5

V

Static Drain-Source On-State Resistance

5.6

10

Ω

3.5

Ω

DYNAMIC PARAMETERS

Input Capacitance

40

50

pF

Output Capacitance

12

25

pF

Reverse Transfer Capacitance

3.5

5.0

pF

SWITCHING PARAMETERS (Note 2)

Turn-ON Delay Time

20

ns

Turn-OFF Delay Time

20

ns

Notes: 1. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.