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FS0203G-8-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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FS0203G-8-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() FS0203 SCR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R301-020. C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off State Voltage (RGK=1kΩ) FS0203-2 VDRM, VRRM 200 V FS0203-4 400 V FS0203-6 600 V FS0203-8 800 V FS0203-9 900 V Average On-State Current (Note 1) Half Cycle, θ=180 º TTAB=95˚C IT(AV) 1.25 A On-State Current (Note 1) Half Cycle, θ=180 º TTAB=95˚C IT(RMS) 0.8 A Non-Repetitive On-State Current Half Cycle, 60Hz, TJ=25ºC ITSM 25 A Half Cycle, 50Hz, TJ=25ºC 22.5 A I 2t Value for Fusing tp=10ms, Half Cycle I 2t 2.5 A 2s Peak Reverse Gate Voltage IGR=10µA, TJ=25ºC VGRM 8 V Peak Gate Current 20µs max. IGM 1.2 A Peak Gate Power 20µs max. PGM 3 W Average Gate Power Dissipation 20ms max. PG(AV) 0.2 W Operating Junction Temperature TJ -40~+125 °C Storage Junction Temperature TSTG -40~+150 °C Soldering Temperature 10s max. TSLD 260 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. With 5cm 2 copper (e=35μm) surface under tab. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction-Leads for DC θJL 25 °C/W Junction to Ambient θJA 60 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off-State Leakage Current IDRM/IRRM VD=VDRM, RGK=1KΩ, TJ=125ºC 500 µA VR=VRRM, TJ=25ºC 5 µA On-State Voltage VTM at IT=1.6A, tp=380µs, TJ=25ºC 1.45 V On-State Threshold Voltage VT(O) TJ=125ºC 0.9 V Dinamic Resistance RD TJ=125ºC 150 mΩ Gate Trigger Current IGT VD=12VDC, RL=140Ω, TJ=25ºC 20 200 µA Gate Trigger Voltage VGT VD=12VDC, RL=140Ω, TJ=25ºC 0.8 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3KΩ, RGK=1KΩ, TJ=125°C 0.1 V Holding Current IH IT=50mA, RGK=1KΩ, TJ=25ºC 5 mA Latching Current IL IG=1mA, RGK=1KΩ, TJ=25ºC 6 mA Critical Rate of Rise of Off-State Voltage dv/dt VD=67%×VDRM, RGK=1KΩ, TJ=125°C 20 V/µs Critical Rate of Current Rise di/dt IG=2xIGT, TR≤100ns, F=60Hz, TJ=125°C 50 A/µs |
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