2

IXDD414PI/414YI/414CI/414SI

Unless otherwise noted, T

All voltage measurements with respect to GND. IXDD414 configured as described in Test Conditions.

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

High input & EN voltage

3.5

V

Low input & EN voltage

0.8

V

Input voltage range

-5

V

Enable voltage range

- 0.3

Vcc + 0.3

V

Input current

-10

10

µA

High output voltage

V

Low output voltage

0.025

V

Output resistance

@ Output high

600

1000

mΩ

Output resistance

@ Output Low

600

1000

mΩ

Peak output current

14

A

Continuous output

current

TO220 (CI), TO263 (YI)

3

4

A

A

Rise time

23

25

29

ns

Fall time

21

22

26

ns

On-time propagation

delay

29

30

33

ns

Off-time propagation

delay

29

31

34

ns

Enable to output high

delay time

Vcc=18V

40

ns

Disable to output low

disable delay time

Vcc=18V

30

ns

Power supply voltage

4.5

18

35

V

Power supply current

1

0

3

10

10

mA

µA

µA

REN

Enable Pull-up Resistor

200

kΩ

Operating Ratings

Specifications Subject To Change Without Notice

Parameter

Value

Maximum Junction Temperature 150 oC

Operating Temperature Range

-55 oC to 125 oC

Thermal Resistance (Junction-to- Case)

TO-220, TO-263 (YI)

10 K/W

14-Pin SOIC (SI)

10 K/W

Thermal Resistance (Junction to Ambient)

8-Pin PDIP (PI)

150 K/W

14-Pin SOIC

120 K/W

TO-220 (CI), TO-263 (YI)

62.5 K/W

Parameter

Value

Supply Voltage

40 V

All Other Pins (unless

-0.3 V to VCC + 0.3 V

specified otherwise)

Power Dissipation, T

oC

8 Pin PDIP (PI)

833 mW

14-Pin SOIC (SI)

1000 mW

TO-220 (CI), TO-263 (YI)

12.5 W

Storage Temperature

-55 oC to 150 oC

Lead Temperature (10 s)

300 oC