IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA52P10P IXTH52P10P

IXTP52P10P IXTQ52P10P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

Note 1

12

20

S

C

iss

2845

pF

C

oss

V

1015

pF

C

rss

275

pF

t

d(on)

22

ns

t

r

29

ns

t

d(off)

38

ns

t

f

22

ns

Q

g(on)

60

nC

Q

gs

V

17

nC

Q

gd

23

nC

R

thJC

0.42

°C/W

R

thCS

(TO-3P)(TO-247)

0.21

°C/W

(TO-220)

0.50

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 52

A

I

SM

Repetitive, pulse width limited by T

JM

- 200

A

V

SD

I

- 3.5

V

t

rr

120

ns

Q

RM

0.53

μC

I

RM

- 8.9

A

Resistive Switching Times

V

R

I

V