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STP80NF03L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP80NF03L
功能描述  N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80NF03L 数据表(HTML) 3 Page - STMicroelectronics

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STP80NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS =15 V, ID =15 A
50
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS =0
5500
pF
Coss
Output Capacitance
1670
pF
Crss
Reverse Transfer
Capacitance
290
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =15V,ID =40 A
RG =4.7Ω VGS =4.5 V
(Resistive Load, Figure 3)
30
ns
tr
Rise Time
270
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =24V,ID = 80A,
VGS =4.5V
85
23
40
110
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD =15V,ID =40 A,
RG =4.7Ω, VGS =4.5V
(Resistive Load, Figure 3)
110
95
ns
ns
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24 V,ID =80 A,
RG =4.7Ω, VGS =4.5V
(Inductive Load, Figure 5)
125
75
125
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
80
A
ISDM (1)
Source-drain Current (pulsed)
320
A
VSD (2)
ForwardOnVoltage
ISD =80A,VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =80A,di/dt =100 A/µs,
VDD =20 V,Tj = 150°C
(see test circuit, Figure 5)
75
0.15
4
ns
µC
A



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