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STB36NM60ND 数据表(PDF) 5 Page - STMicroelectronics |
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STB36NM60ND 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 18 page ![]() DocID023785 Rev 3 5/18 STB36NM60ND, STW36NM60ND Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 29 116 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 29 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 29 A, VDD = 60 V di/dt=100 A/µs (see Figure 18) -175 ns Qrr Reverse recovery charge - 1.4 µC IRRM Reverse recovery current - 16 A trr Reverse recovery time ISD = 29 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 18) -255 ns Qrr Reverse recovery charge - 2.6 µC IRRM Reverse recovery current - 20 A |
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