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DS9502 数据表(PDF) 3 Page - Dallas Semiconductor

部件名 DS9502
功能描述  ESD Protection Diode
PDF  3 Pages
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制造商  DALLAS [Dallas Semiconductor]
网页  https://www.maximintegrated.com/en.html
标志 DALLAS - Dallas Semiconductor

DS9502 数据表(HTML) 3 Page - Dallas Semiconductor

  DS9502 Datasheet HTML 1Page - Dallas Semiconductor DS9502 Datasheet HTML 2Page - Dallas Semiconductor DS9502 Datasheet HTML 3Page - Dallas Semiconductor  
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DS9502
3 of 3
102199
PHYSICAL SPECIFICATIONS
Size
See mechanical drawing
Weight
0.5 grams
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
–40°C to +85°C
Storage Temperature
–55°C to +125°C
Soldering Temperature
260°C for 10 seconds
Continuous DC Current Through Package
80 mA
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
ELECTRICAL CHARACTERISTICS
(-40
°C to +85°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Leakage Current
IL
30
100
nA
2
Avalanche Voltage
VAV
7.4
7.8
V
1,3
Trigger Voltage
VTRIGGER
9.0
9.5
V
1
Trigger Current
ITRIGGER
600
1000
mA
Holding Voltage
VHOLD
5.5
V
1
Holding Current
IHOLD
30
mA
Forward Voltage (-10 mA)
VF
-0.7
-0.8
V
4
Forward Current (-0.7V)
IF
-10
-100
mA
4
Maximum Peak Current
IPP
2.0
A
5
Continuous Current Through Diode
ICC
±160
mA
6
CAPACITANCE
(tA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Junction Capacitance (5V)
CJ5
55
pF
1
Junction Capacitance (0V)
CJ0
100
pF
1
THERMAL RESISTANCE
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Junction To Package
RΘ JC
75
K/W
Junction To Ambient
RΘ JA
200
K/W
NOTES:
1. All voltages are referenced from Cathode to Anode.
2. At 7.0V.
3. At 0.3
µA.
4. Typical values at room temperature.
5. See pulse specification.
6. In either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together,
otherwise +80 mA max).



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