STP30NM50N datasheet(4/18 Pages) STMICROELECTRONICS

部件名	STP30NM50N

功能描述	N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

4 / 18 page

Electrical characteristics

STB/I/F/P/W30NM50N

4/18

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

500

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 13.5 A

0.090

0.115

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS = 15 V, ID = 13.5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

2740

160

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

open drain

2.7

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 27 A,

VGS = 10 V

(see Figure 19)

Obsolete

Product(s)

- Obsolete

Product(s)

STP30NM50N 数据表(PDF) 4 Page - STMicroelectronics

STP30NM50N 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

数据表下载