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STTH50W06SW 数据表(PDF) 3 Page - STMicroelectronics |
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STTH50W06SW 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() STTH50W06S Characteristics Doc ID 023618 Rev 1 3/7 Figure 1. Average forward power dissipation versus average forward current Figure 2. Forward voltage drop versus forward current P (W) F(AV) 0 20 40 60 80 100 120 0 1020 30 40506070 = tp/T tp T δ IF(AV)(A) δ = 1 δ = 0.5 δ = 0.2 δ1 = 0. δ = 0.05 I FM(A) 0.1 1.0 10.0 100.0 1000.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Tj=150°C (Maximum values) Tj=150 °C (Typical values) Tj=25 °C (Maximum values) VFM(V) Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse tp(s) IRM(A) 0 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=400 V Tj=125 °C dIF/dt(A/µs) Figure 5. Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) trr(ns) 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=400 V Tj=125 °C dIF/dt(A/µs) QRR(nC) 0 200 400 600 800 1000 1200 1400 1600 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) IF=IF(AV) VR=400 V Tj=125 °C |
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