2SC3587 datasheet(2/8 Pages) NEC

部件名	2SC3587

功能描述	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

PDF	8 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

标志

2 / 8 page

2SC3587

Note

Test block diagram

Noise Diode

Coax. SW

Post Amp

Mixer

NF Meter

Network

Analyzer

Coax. SW

Stub

Tuner

Bias

Tee

Bias

Tee

Transistor

Under

Test

Sweeper

To test 1 GHz or lower, insert a bandpass filter.

TYPICAL CHARACTERISTICS (TA = 25

°°°°°C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

MAG AND INSERTION GAIN vs.

FREQUENCY

REVERSE TRANSFER CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

DC CURRENT GAIN vs.

COLLECTOR CURRENT

0.8

0.6

0.4

0.2

200

100

0.7

0.5

0.3

0.2

0.1

VCB - Collector to Base Voltage -V

710

100

f = 1.0 MHz

TA - Ambient Temperature -

°C

150

0.1

−5

0.2

0.5

IC - Collector Current - mA

f - Frequency - GHz

200

with heat sink

Rth(j−e)

°C/W

VCE = 6 V

IC = 10 mA

VCE = 6 V

MAG

Rth(j−a)

590

°C/W

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