BAS116T datasheet(2/3 Pages) DIODES

2 / 3 page

DS30258 Rev. 5 - 2

2 of 3

BAS116T, BAW156T, BAV170T, BAV199T

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve

150

200

250

1.0

100

1000

0.1

0.01

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

0.1

150

100

200

T , AMBIENT TEMPERATURE (

)

Fig.3 Typical Reverse Characteristics

°C

= 75V

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

V(BR)R

¾¾

IR = 100

Forward Voltage (Note 2)

¾¾

0.90

1.0

1.1

1.25

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 2)

¾¾

5.0

VR = 75V

VR = 75V, Tj = 150

°C

Total Capacitance

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr

¾¾

3.0

IF = IR = 10mA,

Irr = 0.1 x IR,RL = 100

Notes:

2. Short duration test pulse used to minimize self-heating effect.

100

120

140

160

0.00

1.40

1.20

1.00

0.80

0.60

0.40

0.20

, AVERAGE FORWARD VOLTAGE (V)

F(AVE)

Fig.4 Typical Forward Voltage vs Ambient Temperature

I = 1mA

I = 10mA

I = 50mA

I = 150mA

BAS116T 数据表(PDF) 2 Page - Diodes Incorporated

BAS116T 数据表(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3

数据表下载