SILICON TRANSISTOR

2SC4092

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DATA SHEET

Document No. P10363EJ1V1DS00 (1st edition)

Date Published March 1997 N

Printed in Japan

1987

©

DESCRIPTION

The 2SC4092 is an NPN silicon epitaxial transistor designed for low-

noise amplifier at VHF, UHF band.

It is contained in 4 pins mini-mold package which enables high-isolation

gain.

FEATURES

•

°C)

Collector to Base Voltage

25

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

70

mA

Total Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

0.1

µA

Emitter Cutoff Current

0.1

µA

DC Current Gain

40

200

Gain Bandwidth Product

6

GHz

Output Capacitance

0.55

0.9

pF

Insertion Power Gain

9.5

12

dB

Noise Figure

NF

1.5

3.0

dB

Maximum Available Gain

MAG

14.5

dB

Class

R4/RD *

R5/RE *

Marking

R4

R5

40 to 120

100 to 200

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

PIN CONNECTIONS

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

5

°

5

°

5

°

5

°

2.8

+0.2

−0.3

1.5

+0.2

−0.1