D

S30189 Rev. A-5

1 of 1

BAS85

Features

BAS85

SILICON SCHOTTKY BARRIER DIODE

·

For general applications

·

Low turn-on voltage

·

PN junction guard ring

Characteristic

Symbol

Value

Unit

Continuous reverse voltage

30

V

Forward continuous current*

200

mA

Peak forward current*

300

mA

Surge forward current*

@ tp = 1s

600

mA

Power dissipation*

°C

200

mW

Junction temperature

125

°C

Operating temperature range

-65 to +125

°C

Storage temperature range

-65 to +150

°C

* Valid provided that electrodes are kept at ambient temperature.

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse breakdown voltage

10

mA pulses

30

—

—

V

Features

·

Glass case

·

Weight: 0.05g (approx)

Mechanical Data

C

A

B

Min

Max

A

3.4

3.6

B

1.40

1.50

C

0.20

0.40

All Dimensions in mm