ZLED7001

Universal LED Driver with Temperature Compensation

Data Sheet

August 12, 2010

© 2010 Zentrum Mikroelektronik Dresden AG — Rev. 1.1

All rights reserved. The material contained herein may not be reproduced, adapted, merged, translated, stored, or used without

the prior written consent of the copyright owner. The information furnished in this publication is subject to changes without

notice.

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MOSFET (Q1) and Diode (D1)

The MOSFET and diode must be dimensioned with a minimum 50% safety rating of their relevant voltage and

current parameters. Thus a FET with minimum 500V drain-source breakdown voltage and 0.6A drain current

as well as a fast recovery diode with at least 500V reverse voltage and a 0.6A forward current may be

selected.

3

ESD/Latch-Up-Protection

All pins have an ESD protection of >± 2000V according human body model (HBM). The ESD test follows the

Human Body Model with 1.5 kΩ/100 pF based on MIL 883-G, Method 3015.7

Latch-up protection of >± 100mA has been proven based on JEDEC No. 78A Feb. 2006, temperature class 1.