DATA SHEET

SILICON TRANSISTOR

2SC4095

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DATA SHEET

Document No. P10367EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

1987

©

DESCRIPTION

The 2SC4095 is an NPN epitaxial silicon transistor designed for use in

low-noise and small signal amplifiers from VHF band to UHF band.

2SC4095 features excellent power gain with very low-noise figures.

2SC4095 employs direct nitiride passivated base surface process (DNP

process) which is an NEC proprietary new fabrication technique which

provides excellent noise figures at high current values.

This allows

excellent associated gain and very wide dynamic range.

FEATURES

•

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

100

250

Gain Bandwidth Product

10

GHz

Feed-Back Capacitance

0.25

0.8

pF

Insertion Power Gain

7.5

9.5

dB

Maximum Available Gain

MAG

12

dB

Noise Figure

NF

1.8

3.0

dB

Class

R46/RDF *

R47/RDG *

R48/RDH *

Marking

R46

R47

R48

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

PIN CONNECTIONS

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

5

°

5

°

5

°

5

°

2.8

+0.2

−0.3

1.5

+0.2

−0.1