BC856AW datasheet(2/2 Pages) DIODES

2 / 2 page

DS30251 Rev. A-2

2 of 2

BC856AW - BC858CW

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 3)

BC856

BC857

BC858

V(BR)CBO

-80

-50

-30

—

IC = 10

mA, IB = 0

Collector-Emitter Breakdown Voltage (Note 3)

BC856

BC857

BC858

V(BR)CEO

-65

-45

-30

—

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 3)

V(BR)EBO

-5

—

IE = 1

mA, IC = 0

DC Current Gain (Note 3)

Current Gain Group A

hFE

125

220

420

180

290

520

250

475

800

—

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage (Note 3)

VCE(SAT)

—

-75

-250

-300

-650

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage (Note 3)

VBE(SAT)

—

-700

-850

—

-950

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Voltage (Note 3)

VBE(ON)

-600

—

-650

—

-750

-820

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector-Cutoff Current (Note 3)

ICBO

—

-15

-4.0

µA

VCB = -30V

VCB = -30V, TA = 150°C

Gain Bandwidth Product

100

200

—

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—3

4.5

VCB = -10V, f = 1.0MHz

Noise Figure

—

VCE = -5.0V, IC = 200µA,

RS = 2k

W, f = 1kHz,

Df = 200Hz

Notes:

3. Short duration pulse test to minimize self-heating effect.

@ TA =25°C unless otherwise specified

XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

XXX

Marking Information

Notes:

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

*xx = device type, e.g. BC856AW-7.

Device

Packaging

Shipping

BC85xxW-7*

SOT-323

3000/Tape & Reel

Ordering Information (Note 4)

Month

Jan

Feb

March

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

Year

1998

1999

2000

2001

2002

2003

2004

Code

Date Code Key

BC856AW 数据表(PDF) 2 Page - Diodes Incorporated

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