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CTA2 数据表(PDF) 2 Page - Diodes Incorporated |
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CTA2 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page  DS30296 Rev. 2 - 2 2 of 4 CTA2P1N Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element @ TA = 25 °C unless otherwise specified Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @ TA = 25 °C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100 mA, IC = 0 Collector Cutoff Current ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V Base Cutoff Current IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ ¾ IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base- Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 k W VCE = -10V, IC = -1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS Current Gain-Bandwidth Product fT 200 ¾ MHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ¾ 15 ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Fall Time tf ¾ 30 ns Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BVDSS 60 70 ¾ V VGS = 0V, ID = 10 mA Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C IDSS ¾¾ 1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ¾¾ ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 1.0 ¾ 2.0 V VDS =VGS, ID =-250 mA Static Drain-Source On-Resistance @ Tj = 25°C @Tj = 125°C RDS (ON) ¾ 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A On-State Drain Current ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 ¾¾ mS VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ¾ 22 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ¾ 7.0 20 ns VDD = 30V, ID = 0.2A, RL = 150 W,VGEN = 10V, RGEN = 25 W Turn-Off Delay Time tD(OFF) ¾ 11 20 ns Note: 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. |
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