IMT4 datasheet(1/3 Pages) DIODES

部件名	IMT4

功能描述	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

标志

1 / 3 page

DS30303 Rev. 2 - 2

1 of 3

IMT4

www.diodes.com

·

Epitaxial Planar Die Construction

·

Complementary NPN Type Available

(IMX8)

·

Small Surface Mount Package

Features

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

M

J

L

D

F

B C

H

K

B

2

B

1

E

1

C

2

E

2

C

1

Mechanical Data

·

Case: SOT-26, Molded Plastic

·

Case material - UL Flammability Rating

Classification 94V-0

·

Moisture sensitivity: Level 1 per J-STD-020A

·

Terminals: Solderable per MIL-STD-202,

Method 208

·

Terminal Connections: See Diagram

·

Marking: KX7, See Page 2

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.016 grams (approx.)

IMT4

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Characteristic

Symbol

IMT4

Unit

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-120

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current - Continuous

IC

-50

mA

Power Dissipation (Note 1)

Pd

225

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

555

°C/W

Operating and Storage Temperature Range

Tj,TSTG

-55 to +150

°C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

-120

¾¾

V

IC = -50

mA

Collector-Emitter Breakdown Voltage

V(BR)CEO

-120

¾¾

V

IC = -1.0mA

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

¾¾

V

IE = -50

mA

Collector Cutoff Current

ICBO

¾¾

-0.5

mA

VCB = -100V

Emitter Cutoff Current

IEBO

¾¾

-0.5

mA

VEB = -4.0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

180

¾

820

¾

IC = -2.0mA, VCE = -6.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾¾

-0.5

V

IC = -10mA, IB = -1.0mA

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

¾

140

¾

MHz

VCE = -12V, IE = 2.0mA,

f = 100MHz

SOT-26

Dim

Min

Max

Typ

A

0.35

0.50

0.38

B

1.50

1.70

1.60

C

2.70

3.00

2.80

D

¾¾

0.95

F

¾¾

0.55

H

2.90

3.10

3.00

J

0.013 0.10

0.05

K

1.00

1.30

1.10

L

0.35

0.55

0.40

M

0.10

0.20

0.15

a

0

°

8°

¾

All Dimensions in mm

B

2

B

1

E

1

C

2

E

2

C

1

Notes:

1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.

2. Short duration pulse test used to minimize self-heating effect.

类似零件编号 - IMT4

制造商	部件名	数据表	功能描述
Rohm	IMT4	54Kb / 1P	General purpose (dual transistors)
Rohm	IMT4	71Kb / 3P	General purpose (dual transistors)
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Rohm	IMT4	59Kb / 3P	General purpose (dual transistors)
Diodes Incorporated	IMT4-7-F	455Kb / 4P	DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30303 Rev. 7 - 2

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