MBR2045CT datasheet(1/2 Pages) DIODES

部件名	MBR2045CT

功能描述	20A SCHOTTKY BARRIER RECTIFIER

PDF	2 Pages

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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1 / 2 page

D

S23016 Rev. G-2

1 of 2

MBR2030CT-MBR2060CT

MBR2030CT - MBR2060CT

20A SCHOTTKY BARRIER RECTIFIER

Features

L

M

A

N

P

D

E

K

C

B

G

12 3

J

HH

Pin1+

Pin3+

Pin2-

Case

+

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Schottky Barrier Chip

·

Guard Ring Die Construction for

Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

Voltage Drop

·

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

·

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

·

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Marking: Type Number

·

Weight: 2.24 grams (approx)

·

Mounting Position: Any

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

2030CT

MBR

2035CT

MBR

2040CT

MBR

2045CT

MBR

2050CT

MBR

2060CT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

35

40

45

50

60

V

RMS Reverse Voltage

VR(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

@ TC = 125

°C

(Note 1)

IO

20

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

150

A

Forward Voltage Drop (Note 3)

@ IF = 20A, TC = 25

°C

@ IF = 20A, TC = 125

°C

@ IF = 10A, TC = 125

°C

VFM

0.84

0.72

0.57

0.95

0.85

0.70

V

Peak Reverse Current

@ TC = 25

°C

at Rated DC Blocking Voltage

@ TC = 125

°C

IRM

0.1

15

mA

Typical Junction Capacitance

(Note 2)

Cj

650

pF

Typical Thermal Resistance Junction to Case

(Note 1)

RqJc

2.0

°C/W

Voltage Rate of Change (Rated VR)

dV/dt

1000

10,000

V/

ms

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width

£300 ms, duty cycle £2%.

TO-220AB

Dim

Min

Max

A

14.22

15.88

B

9.65

10.67

C

2.54

3.43

D

5.84

6.86

E

¾

6.35

G

12.70

14.73

H

2.29

2.79

J

0.51

1.14

K

3.53

Æ 4.09Æ

L

3.56

4.83

M

1.14

1.40

N

0.30

0.64

P

2.03

2.92

All Dimensions in mm

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