MBR3045PT datasheet(1/2 Pages) DIODES

部件名	MBR3045PT

功能描述	30A SCHOTTKY BARRIER RECTIFIER

PDF	2 Pages

Scroll/Zoom	100%

制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

标志

1 / 2 page

D

S23017 Rev. E-2

1 of 2

MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

Features

A

B

E

G

J

L

M

N

P*

*2 Places

Q

K

S

M

H

R

D

C

TO-3P

Dim

Min

Max

A

3.20

3.50

B

4.59

5.16

C

20.80

21.30

D

19.70

20.20

E

2.10

2.40

G

0.51

0.76

H

15.90

16.40

J

1.70

2.70

K

3.10

Æ

3.30

Æ

L

3.50

4.51

M

5.20

5.70

N

1.12

1.22

P

1.93

2.18

Q

2.97

3.22

R

11.70

12.80

S

4.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

·

Schottky Barrier Chip

·

Guard Ring Die Construction for

Transient Protection

·

Low Power Loss, High Efficiency

·

High Surge Capability

·

High Current Capability and Low Forward

Voltage Drop

·

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

·

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

·

Case: Molded Plastic

·

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

·

Polarity: As Marked on Body

·

Marking: Type Number

·

Weight: 5.6 grams (approx.)

·

Mounting Position: Any

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

MBR

3030PT

MBR

3035PT

MBR

3040PT

MBR

3045PT

MBR

3050PT

MBR

3060PT

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

30

35

40

45

50

60

V

RMS Reverse Voltage

VR(RMS)

21

24.5

28

31.5

35

42

V

Average Rectified Output Current

@ TC = 125

°C

(Note 1)

IO

30

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

200

A

Forward Voltage Drop

@ IF = 20A, TC = 25

°C

per element (Note 3)

@ IF = 20A, TC = 125

°C

VFM

0.65

0.60

0.75

0.65

V

Peak Reverse Current

@ TC = 25

°C

at Rated DC Blocking Voltage, per element @ TC = 125

°C

IRM

1.0

60

5.0

100

mA

Typical Junction Capacitance

(Note 2)

Cj

700

pF

Typical Thermal Resistance Junction to Case

(Note 1)

RqJc

1.4

2.0

K/W

Voltage Rate of Change (Rated VR)

dV/dt

10,000

V/µs

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width

£300 ms, duty cycle £2%.

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