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MBR730 数据表(PDF) 1 Page - Diodes Incorporated |
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MBR730 数据表(HTML) 1 Page - Diodes Incorporated |
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1 / 2 page ![]() DS23007 Rev. 7 - 2 1 of 2 MBR730-MBR760 MBR730 - MBR760 7.5A SCHOTTKY BARRIER RECTIFIER Features L M A N P D E K C B J G R Pin1+ Pin 1 Pin 2 Pin2- Case + TO-220AC Dim Min Max A 14.22 15.88 B 9.65 10.67 C 2.54 3.43 D 5.84 6.86 E ¾ 6.35 G 12.70 14.73 J 0.51 1.14 K 3.53 Æ 4.09Æ L 3.56 4.83 M 1.14 1.40 N 0.30 0.64 P 2.03 2.92 R 4.83 5.33 All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency · High Surge Capability · High Current Capability and Low Forward Voltage Drop · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application · Plastic Material: UL Flammability Classification Rating 94V-0 Mechanical Data · Case: Molded Plastic · Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 · Polarity: See Diagram · Weight: 2.3 grams (approx.) · Mounting Position: Any · Marking: Type Number Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol MBR 730 MBR 735 MBR 740 MBR 745 MBR 750 MBR 760 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current (Note 1) @ TC = 125 °C IO 7.5 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage Drop @ IF = 7.5A, TC = 25 °C @IF = 7.5A, TC = 125 °C VFM 0.55 0.70 0.70 0.75 V Peak Reverse Current @TC = 25 °C at Rated DC Blocking Voltage @ TC = 125 °C IRM 1.0 15 1.0 50 mA Typical Junction Capacitance (Note 2) Cj 400 pF Typical Thermal Resistance Junction to Case (Note 1) RqJc 3.5 °C/W Voltage Rate of Change (Rated VR) dV/dt 10,000 V/ ms Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. |
类似零件编号 - MBR730 |
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类似说明 - MBR730 |
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