IXTH26N60P datasheet(2/5 Pages) IXYS

2 / 5 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH26N60P IXTQ26N60P

IXTT26N60P IXTV26N60P IXTV26N60PS

Fig. 2. Extended Output Characteristics

@ 25

ºC

VD S - Volts

VGS = 10V

Fig. 1. Output Characteristics

@ 25

ºC

123

4567

VD S - Volts

VGS = 10V

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min. Typ. Max.

= 20 V; I

D = 0.5 ID25, pulse test

iss

4150

oss

= 0 V, V

DS = 25 V, f = 1 MHz

400

rss

d(on)

= 10 V, V

DS = 0.5 ID25, ID = 0.5 ID25

d(off)

= 5

Ω (External)

g(on)

= 10 V, V

DS = 0.5 VDSS, ID = 0.5 ID25

thJC

0.27

°C/W

thCS

TO-3P, PLUS220 & TO-247

0.21

°C/W

Source-Drain Diode

Characteristic Values

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

Min. Typ. Max.

GS = 0 V

Repetitive

F = IS, VGS = 0 V, pulse test

1.5

F = 26A, -di/dt = 100 A/μs

500

Characteristic Curves

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2

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