2SC4956 datasheet(2/6 Pages) NEC

部件名	2SC4956

功能描述	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

PDF	6 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

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2 / 6 page

2SC4956

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITION

Collector Cutoff Current

ICBO

0.1

µAVCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

µAVEB = 1 V, IC = 0

DC Current Gain

hFE

150

VCE = 3 V, IC = 5 mA*1

Gain Bandwidth Product

GHz

VCE = 3 V, IC = 5 mA, f = 2.0 GHz

Feed back Capacitance

Cre

0.2

0.4

VCB = 3 V, IE = 0, f = 1 MHz*2

Insertion Power Gain

|S21e|2

911

VCE = 3 V, IC = 5 mA, f = 2.0 GHz

Noise Figure

2.5

4.0

VCE = 3 V, IC = 3 mA, f = 2.0 GHz

Pulse Measurement; PW

≤ 350

µs, Duty Cycle ≤ 2 % Pulsed.

Measured with 3 terminals bridge, Emitter and Case should be grounded.

hFE Classification

Rank

T82

Marking

T82

hFE

75 to 150

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

TA – Ambient Temperature – ˚C

COLLECTOR CURRENT

vs. BASE TO EMITTER VOLTAGE

VBE – Base to Emitter Voltage – V

200

100

150

60 mW

0.5

VCE = 3 V

Free Air

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