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MMST5551 数据表(PDF) 2 Page - Diodes Incorporated

部件名 MMST5551
功能描述  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  2 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

MMST5551 数据表(HTML) 2 Page - Diodes Incorporated

  MMST5551 Datasheet HTML 1Page - Diodes Incorporated MMST5551 Datasheet HTML 2Page - Diodes Incorporated  
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DS30173 Rev. B-1
2 of 2
MMST5551
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Pulse test: Pulse width
£ 300ms, duty cycle £ 2%.
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V(BR)CBO
180
¾
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
¾
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
80
80
30
¾
250
¾
¾
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base- Emitter Saturation Voltage
VBE(SAT)
¾
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
¾
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
VCE = 5.0V, IC = 200
mA,
RS = 1.0k
W, f = 1.0kHz



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