©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10389EJ2V0DS00 (2nd edition)

(Previous No. TD-2401)

Date Published July 1995 P

Printed in Japan

2SC5010

DESCRIPTION

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an

NEC proprietary fabrication technique.

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

FEATURES

•

Low Voltage Use.

•

•

•

Low NF

•

•

Ultra Super Mini Mold Package.

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5010

50 pcs/Unit.

2SC5010-T1

3 kpcs/Reel.

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

30

mA

Total Power Dissipation

125

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

Embossed tape 8 mm wide.

Pin3(Collector) face to perforation side

of the tape.

PACKAGE DIMENSIONS

in milimeters

1.6 ± 0.1

0.8 ± 0.1

2

1

3

1. Emitter

2. Base

3. Collector