1 of 7

Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Ordering Information

VRF1

VRF2

RF1126

RF1

RF2

RF1126

BROADBAND MEDIUM POWER SPDT SWITCH

The RF1126 is a single-pole double-throw (SPDT) switch designed for gen-

eral purpose switching applications which require very low insertion loss

and medium power handling capability. The RF1126 is ideally suited for

battery operated applications requiring high performance switching with

very low DC power consumption. The RF1126 features low insertion loss,

high linearity, and very good harmonic characteristics, and is operable

from 1.8V to 3.6V control voltage. It is fabricated with 0.5

m GaAs

pHEMT process, and is packaged in a very compact 2mmx1.3mm, 6-pin,

leadless QFN package.

Features



Broadband Performance

Low Frequency to 5.8GHz



Very Low Insertion Loss

0.26dB Typ at 1GHz

0.32dB Typ at 2GHz



Excellent Harmonics <-75dBc

at 2GHz



62dBm



1.8V Capable for Low Power

Applications



P0.1dB>23dBm Typ @ 2GHz

Applications



Cellular Handset Applications



Antenna Tuning Applications



IEEE802.11b/g WLAN Appli-

cations



Multi-mode GSM, W-CDMA

Applications



WLAN Applications

RF1126

Broadband Medium Power SPDT Switch

RF1126PCBA-410

Fully Assembled Evaluation Board

DS110405



Package Style: QFN, 6-pin, 2mmx1.3mmx0.35mm