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2SC5012 数据表(PDF) 2 Page - NEC |
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2SC5012 数据表(HTML) 2 Page - NEC |
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2 / 7 page ![]() 2SC5012 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector Cutoff Current ICBO 1.0 µAVCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 µAVEB = 1 V, IC = 0 DC Current Gain hFE 50 100 250 VCE = 8 V, IC = 20 mA*1 Gain Bandwidth Product fT 9.0 GHz VCE = 8 V, IC = 20 mA Feed-back Capacitance Cre 0.25 0.8 pF VCB = 10 V, IE = 0, f = 1 MHz*2 Insertion Power Gain |S21e|2 13 15 dB VCE = 8 V, IC = 20 mA,f = 1.0 GHz Noise Figure NF 1.2 2.5 dB VCE = 8 V, IC = 7 mA,f = 1.0 GHz *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank EB FB GB Marking R36 R37 R38 hFE 50 to 100 80 to 160 125 to 250 |
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