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MPS650 数据表(PDF) 1 Page - Central Semiconductor Corp |
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MPS650 数据表(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CBCP68 CBCX68 CMPT651 CZT651 MPS650 MPS651 GROSS DIE PER 5 INCH WAFER 10,583 PROCESS CP314V Small Signal Transistor NPN - High Current Transistor Chip Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å www.centra lsemi.com R1 (22-March 2010) |
类似零件编号 - MPS650 |
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类似说明 - MPS650 |
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