©

1993

DATA SHEET

SILICON TRANSISTOR

Document No. P10393EJ2V0DS00 (2nd edition)

(Previous No. TD-2414)

Date Published August 1995 P

Printed in Japan

2SC5014

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

•

Small Package

•

•

Low Noise, High Gain

•

Low Voltage Operation

ORDERING INFORMATION

PART

QUANTITY

PACKING STYLE

NUMBER

2SC5014-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to

perforation side of the tape.

2SC5014-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

*

Please contact with responsible NEC person, if you require

evaluation sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC5014)

Collector to Base Voltage

9V

Collector to Emitter Voltage

6V

Emitter to Base Voltage

2V

Collector Current

10

mA

Total Power Dissipation

60

mW

Junction Temperature

150

˚C

Storage Temperature

–65 to +150

˚C

PACKAGE DIMENSIONS

in millimeters

Caution; Electrostatic Sensitive Device.

2.1 ± 0.2

1.25 ± 0.1

1. Collector

2. Emitter

3. Base

4. Emitter

PIN CONNECTIONS