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DF252 数据表(PDF) 3 Page - Dynex Semiconductor |
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DF252 数据表(HTML) 3 Page - Dynex Semiconductor |
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3 / 8 page ![]() DF252 3/8 t rr 20 Symbol Typ. Units Parameter V FM Forward voltage I RRM Peak reverse current Reverse recovery time Q RA1 Recovered charge (50% chord) I RM Reverse recovery current K Soft factor V TO Threshold voltage r T Slope resistance V FRM Forward recovery voltage di/dt = 1000A/ µs, T j = 125 oC- 50 V At T vj = 150 oC - 1.33 m Ω At T vj = 150 oC - 1.0 V 1.5 - - -21 A -35 µC 3.2 - µs At V RRM, Tcase = 125 oC- mA At 450A peak, T case = 25 oC - 1.6 V Conditions Max. I F = 750A, diRR/dt = 100A/µs T case = 125 oC, V R = 100V DEFINITION OF K FACTOR AND Q RA1 0.5x I RR I RR dI R/dt t 1 t 2 τ Q RA1 = 0.5x IRR(t1 + t2) k = t 1/t2 CHARACTERISTICS |
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