STP45N65M5 datasheet(5/20 Pages) STMICROELECTRONICS

部件名	STP45N65M5

功能描述	N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

5 / 20 page

DocID022854 Rev 4

5/20

STB45N65M5, STF45N65M5, STP45N65M5

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 400 V, ID = 23 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19 and

Figure 22)

79.5

9.3

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

140

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 35 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 35 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 19)

392

7.4

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 35 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 19)

468

9.7

µC

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