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DNB63 数据表(PDF) 4 Page - Dynex Semiconductor |
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DNB63 数据表(HTML) 4 Page - Dynex Semiconductor |
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4 / 7 page ![]() 4/7 www.dynexsemi.com DNB63 CHARACTERISTICS Forward voltage Peak reverse current Parameter µC 4000 Q S Total stored charge Symbol V FM I RRM I RM Peak recovery current - 600 A - At V RRM, Tcase = 190 oC- 60 mA - 1.05 V At 3000A peak, T case = 25 oC Conditions Min. Max. Units At T vj = 190˚C - V TO Threshold voltage r T Slope resistance 0.046 m Ω At T vj = 190˚C - 0.75 V t rr Reverse recovery time -20 µs I F = 1000A, dIRR/dt = 50A/µs T case = 175˚C, VR = 100V CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves V FM Equation:- V FM = A + Bln (I F ) + C.I F +D. √I F Where A = 0.517184 B = 0.035583 C = 4.94 x 10–5 D = –0.0011 these values are valid for T j = 125˚C for I F 500A to 10000A 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 0 2000 4000 6000 8000 10000 Measured under pulse conditions Tj = 190˚C 0 2000 4000 6000 8000 Mean forward current, IF(AV) - (A) 0 2000 4000 6000 8000 dc Half wave 6 phase 3 phase 10000 |
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