2SC5192 datasheet(2/10 Pages) NEC

部件名	2SC5192

功能描述	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

PDF	10 Pages

Scroll/Zoom	100%

制造商	NEC [NEC]

网页	http://www.nec.com/

标志

2 / 10 page

2SC5192

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

100

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

100

DC Current Gain

hFE

VCE = 1 V, IC = 3 mANote 1

160

Insertion Power Gain (1)

|S21e|2

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

4.0

Insertion Power Gain (2)

|S21e|2

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

Noise Figure (1)

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.7

2.5

Noise Figure (2)

VCE = 3 V, IC = 7 mA, f = 2.0 GHz

1.5

Gain Bandwidth Product (1)

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

4.5

GHz

Gain Bandwidth Product (2)

VCE = 3 V, IC = 20 mA, f = 2.0 GHz

GHz

Collector Capacitance

Cre

VCB = 1 V, IE = 0, f = 1.0 MHzNote 2

0.65

0.8

Notes 1. Pulse Measurement: PW

≤ 350

µs, Duty cycle ≤ 2 %, Pulsed

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE Classification

Rank

Marking

T88

hFE

80 to 160

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