| 数据搜索系统,热门电子元器件搜索 |
|
DS2012SF 数据表(PDF) 5 Page - Dynex Semiconductor |
|
|
|||||||||||||||||||||||||||||
DS2012SF 数据表(HTML) 5 Page - Dynex Semiconductor |
|
5 / 7 page ![]() 5/7 www.dynexsemi.com DS2012SF Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.6 Surge (non-repetitive) forward current vs time (with 50% V RRM at T case 175˚C) 0.1 0.01 0.001 0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 Single side 0.038 0.040 0.042 0.043 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 10000 1000 100 Conditions: Tj = 150˚C VR = 100V IF = 2000A IRM IF dIF/dt QS 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 10 Conditions: Tj = 150˚C VR = 100V IF = 2000A 1 101 2 3 510 20 50 0 5 10 15 20 25 ms Cycles at 50Hz Duration 0.50 0.75 1.00 I2t = I2 x t 2 ^ I2t |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |