2AB1116-U datasheet(1/1 Pages) SECOS

部件名	2AB1116-U

功能描述	PNP Plastic Encapsulated Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 1 page

2SB1116

-1A , -60V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

27-Aug-2012 Rev. A

Page 1 of 1

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

1

Base

2

Emitter

Collector

3

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

High current surface mount PNP silicon switching transistor

for Load management in portable applications

CLASSIFICATION OF hFE

Product-Rank

2SB1116-L

2SB1116-K

2AB1116-U

Range

135~270

200~400

300~600

MARKING

PACKAGE INFORMATION

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector - Base Voltage

VCBO

-60

V

Collector - Emitter Voltage

VCEO

-50

V

Emitter - Base Voltage

VEBO

-6

V

Collector Current - Continuous

IC

-1

A

Collector Power Dissipation

PC

350

mW

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-Base Breakdown Voltage

V(BR)CBO

-60

-

V

IC= -100µA, IE=0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-50

-

V

IC= -1mA, IB=0

Emitter-Base Breakdown Voltage

V(BR)EBO

-6

-

V

IE= -100µA, IC=0

Collector Cut-Off Current

ICBO

-

-0.1

µA

VCB= -60V, IE=0

Emitter Cut-Off Current

IEBO

-

-0.1

µA

VEB= -6V, IC=0

DC Current Gain

hFE

135

-

600

VCE= -2V, IC= -100mA

81

-

VCE= -2V, IC= -1A

Collector-Emitter Saturation Voltage

VCE(sat)

-

-0.3

V

IC= -1A, IB = -50mA

Base-Emitter Saturation Voltage

VBE(sat)

-

-1.2

V

IC= -1A, IB = -50mA

Base -emitter voltage

VBE

-0.6

-

-0.7

V

VCE= -2V, IC= -50mA

Transition frequency

fT

70

-

MHz

VCE= -2V,IC= -100mA

Collector Output Capacitance

Cob

-

25

-

pF

VCB= -10V, IE=0, f=1MHz

Turn-on time

tON

-

0.07

-

µ

S

VCC= -10V,IC= -100mA,

IB1=-IB2= -0.01A, VBE(off)=2~3V

Storage time

tS

-

0.7

-

Fall time

tf

-

0.07

-

1116

Package

MPQ

Leader Size

SOT-23

3K

7 inch

SOT-23

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.70

3.04

G

-

0.18

B

2.10

2.80

H

0.40

0.60

C

1.20

1.60

J

0.08

0.20

D

0.89

1.40

K

0.6 REF.

E

1.78

2.04

L

0.85

1.15

F

0.30

0.50

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